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| BUL54ASMD MECHANICAL DATA Dimensions in mm 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3 .6 0 (0 .1 4 2 ) M ax. 1 3 2 * SEMEFAB DESIGNED AND DIFFUSED DIE * HIGH VOLTAGE * FAST SWITCHING (tf = 40ns) * EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE * HIGH ENERGY RATING * EFFICIENT POWER SWITCHING * MILITARY AND HI-REL OPTIONS 0 .7 6 (0 .0 3 0 ) m in . 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) FEATURES * Multi-base design for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. * Ion implant and high accuracy masking for tight control of characteristics from batch to batch. * Triple Guard Rings for improved control of high voltages. SMD1 Package Pad 1 - Base Pad 2 - Collector Pad 3 - Emitter ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Rth Semelab plc. Collector - Base Voltage Collector - Emitter Voltage (IB = 0) Emitter - Base Voltage Collector Current Peak Collector Current Base Current Total Dissipation at Tcase = 25C Derate above 25C when used on efficient heatsink Operating and Storage Temperature Range Thermal Resistance Junction - Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 1000V 500V 10V 2A 4A 0.8A 35W 0.2W/C -65 to 200C 3.5C/W Prelim. 7/00 BUL54ASMD ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. 500 1000 IC = 0 VCC = 500V VCB = 1000V TC = 125C IC = 0 IC = 100mA hFE* DC Current Gain IC = 500mA IC = 1A IC = 100mA VCE(sat)* Collector - Emitter Saturation Voltage IC = 500mA IC = 1A VBE(sat)* VBE(on)* Base - Emitter Saturation Voltage Base - Emitter On Voltage DYNAMIC CHARACTERISTICS fT Cob Transition Frequency Output Capacitance SECOND BREAKDOWN Second Breakdown Collector Current IC = 100mA f = 10MHz VCB = 20V IE = 0 VCE = 50V t = 1s 0.8 0.08 2 0.04 0.2 4 0.1 ms Typ. Max. Unit ELECTRICAL CHARACTERISTICS VCEO(sus)* Collector - Emitter Sustaining Voltage IC = 100mA V(BR)CBO* V(BR)EBO* ICEO* ICBO* IEBO* Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Emitter Cut-Off Current Collector - Base Cut-Off Current Emitter Cut-Off Current IC = 1mA IE = 1mA IB = 0 IE = 0 V 100 10 100 10 100 mA mA 10 mA VEB = 5V TC = 125C VCE = 4V VCE = 4V VCE = 4V TC = 125C IB = 20mA IB = 100mA IB = 200mA IB = 100mA IB = 200mA VCE = 4V VCE = 4V f = 1MHz 20 12 5 4 40 18 8 7 0.05 0.15 0.3 0.8 0.9 0.8 -- 0.1 0.2 0.5 1.0 1.1 1.0 V V V IC = 500mA IC = 1A IC = 500mA 20 20 35 MHz pF IS/B ton ts tf A SWITCHING CHARACTERISTICS (resistive load) On Time VCC = 150V Storage Time IB1 = 0.2A Fall Time IC = 1A IB2 = -0.4A * Pulse test tp = 300ms , d 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/00 |
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